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2N6038 - (2N6037 - 2N6039) Silicon Power Transistor

Download the 2N6038 datasheet PDF. This datasheet also covers the 2N6037 variant, as both devices belong to the same (2n6037 - 2n6039) silicon power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

With TO-126 package Complement to type 2N6034/6035/6036 DARLINGTON High DC current gain APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector Base 2N6037 2N6038 2N6039 Absolute ma

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Note: The manufacturer provides a single datasheet file (2N6037_SavantIC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N6038
Manufacturer SavantIC
File Size 132.61 KB
Description (2N6037 - 2N6039) Silicon Power Transistor
Datasheet download datasheet 2N6038 Datasheet

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Other Datasheets by SavantIC

Part Number Description
2N6030 (2N6029 / 2N6030) Silicon PNP Power Transistor
2N6031 Silicon Power Transistor
2N6034 (2N6034 - 2N6036) Silicon Power Transistor
2N6035 (2N6034 - 2N6036) Silicon Power Transistor
2N6036 (2N6034 - 2N6036) Silicon Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2N6034/6035/6036 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector Base 2N6037 2N6038 2N6039 Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6037 VCBO Collector-base voltage 2N6038 2N6039 2N6037 VCEO Collector-emitter voltage 2N6038 2N6039 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 4 8 0.