2N6264 Datasheet | SavantIC

DESCRIPTION - With TO-66 package - High breakdown voltage - Low collector saturation voltage APPLICATIONS - A wide variety of medium-to-high power, high-voltage applications - Series and shunt regulators - High-fidelity amplifiers - Power switching circuits - Solenoid drivers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6263 2N6264 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2N6263 2N6264 2N6263 2N6264 CONDITIONS Open emitter VALUE 140 170 120 150 7 3 4 2 2N6263 2N6264 TC=25 20 50 150 -65~200 UNIT V VCEO VEBO IC ICM IB PT Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Open base Open collector V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case 2N6263 2N6264 MAX 8.75 3.5 UNIT /W Savant IC Semiconductor .. Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6263 IC=0.1 A ; IB=0 2N6264 2N6263 2N6264 2N6263 VBE Base -emitter on voltage 2N6264 2N6263 ICEX Collector cut-off current 2N6264 2N6263 ICEO Collector cut-off current 2N6264 2N6263 IEBO Emitter cut-off current 2N6264 2N6263 h FE-1 DC current gain 2N6264 2N6263 h FE-2 DC current gain 2N6264 f T Transition frequency Second breakdown collector current with base forward biased 2N6263 2N6264 IC=0.2A ; VCE=4V VCE=120Vdc,t=1.0s, Nonrepetitive IC=3A ; VCE=2V 5 200 IC=1A ; VCE=2V 20 3 VEB=7V; IC=0 IC=0.5 A ; VCE=4V 20 VCE=130V;IB=0 VEB=5V; IC=0 IC=1.0A ; VCE=2V VCE=120V; VBE(off)=-1.5V TC=150 VCE=150V; VBE(off)=-1.5V TC=150 VCE=100V;IB=0 IC=0.5A; IB=0.05A IC=1.0A; IB=0.1A IC=0.5A ; VCE=4V 150 CONDITIONS SYMBOL 2N6263 2N6264 MIN 120 TYP. UNIT VCEO(SUS) Collector-emitter sustaining voltage VCEsat Collector-emitter saturation voltage 1.2 V 0.5 2.0 V 1.5 2 10 0.05 1.0 5 m A 1 2 m A 0.2...