• Part: 2N6686
  • Description: Silicon Power Transistor
  • Category: Transistor
  • Manufacturer: SavantIC
  • Size: 137.54 KB
Download 2N6686 Datasheet PDF
SavantIC
2N6686
2N6686 is Silicon Power Transistor manufactured by SavantIC.
DESCRIPTION - With TO-3 package - Fast switching speed - Low collector saturation voltage APPLICATIONS - For power supplies and other high-voltage switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 260 160 8 25 50 8 200 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W Savant IC Semiconductor .. Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. SYMBOL UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat Collector-emitter saturation voltage IC=25A; IB=2.5A VBEsat Base-emitter saturation voltage IC=25A; IB=2.5A ICEV Collector cut-off current VCE=260V; VBE=-1.5V µA IEBO Emitter cut-off current VEB=8V;...