SavantIC 2SA1105
SILICON POWER TRANSISTOR
DESCRIPTION
●With TO-3PN package●High frequency
●High power dissipation
APPLICATIONS
●Audio power amplifer applications●DC-DC converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -6 -9 90 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1105 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.8 V ICBO Collector cut-...