2SA1117
DESCRIPTION
- With TO-3 package
- High power dissipations APPLICATIONS
- For power switching amplifier and general purpose applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -6 -17 -5 200 150 -65~150 UNIT V V V A A W
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
SYMBOL
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50m A ;IB=0
-200
V(BR)EBO
Emitter-base breakdown voltage
IE=-1m A ;IC=0
-6
VCEsat
Collector-emitter saturation voltage
IC=-5A;...
