2SA765 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SA765 SYMBOL MAX UNIT V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-1mA ;IE=0 IC=-4A; VCE=-12V -80 V Collector-base breakdown voltage -80 V Collector-emitter saturation voltage -1.5 V Base-emitter saturation voltage -2.0 V...