2SB1085A
2SB1085A is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-220 package
- plement to type 2SD1562A
- Low collector saturation voltage APPLICATIONS
- Designed for use in low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -160 -160 -5 -1.5 -3.0 20 150 -55~150 UNIT V V V A A W
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1m A ,IB=0 IC=-50µA ,IE=0 IE=-50µA ,IC=0 IC=-1A; IB=-0.1A IC=-1A; IB=-0.1A VCB=-120V; IE=0 VEB=-4V; IC=0 IC=-0.1A ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-0.1A ; VCE=-5V 60 MIN -160 -160 -5
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO h FE COB f T
TYP.
UNIT V V V
-2.0 -1.5 -1.0 -1.0 200 30 50
V V µA µA p F MHz h FE classifications D 60-120 E 100-200
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10...
