2SB1087 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-30mA, IB=0 IC=-2A ,IB=-2mA IC=-2A ,IB=-2mA VCB=-100V, IE=0 VEB=-5V; MAX UNIT V -1.5 -2.0 1 -3 20000 V V µA...