2SB1106
2SB1106 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-220C package
- DARLINGTON
- High DC durrent gain
- plement to type 2SD1606 APPLICATIONS
- Designed for use in low frequency power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Tc=25 )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -6 40 150 -55~150 UNIT V V V A W
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25m A, RBE== IE=-50m A, IC=0 IC=-3A ,IB=-6m A IC=-6A ,IB=-60m A IC=-3A ,IB=-6m A IC=-6A ,IB=-60m A VCB=-120V, IE=0 VCE=-100V, RBE== IC=-3A ; VCE=-3V ID=-6A 1000 MIN -120 -7
SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO h FE VD
TYP.
UNIT V V
-1.5 -3.0 -2.0 -3.5 -100 -10
V V V V µA µA
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline...
