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2SB1149 - SILICON POWER TRANSISTOR

General Description

With TO-126 package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximu

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Datasheet Details

Part number 2SB1149
Manufacturer SavantIC
File Size 140.83 KB
Description SILICON POWER TRANSISTOR
Datasheet download datasheet 2SB1149 Datasheet

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1149 DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 15 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -8 -3.0 -5.0 1.