2SB1149 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-1.5A ;IB=-1.5mA IC=-1.5A ;IB=-1.5mA VCB=-100V; VCE=-2V 2000 1000 MIN 2SB1149 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. -0.9 -1.5 MAX...