2SB1158
DESCRIPTION
- With TO-3PFa package
- plement to type 2SD1713
- High f T
- Wide area of safe operation APPLICATIONS
- For high power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -6 -10 70 W UNIT V V V A A
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-4A ;IB=-0.4A IC=-4A ; VCE=-5V VCB=-120V; IE=0 VEB=-3V;...
