2SB1368 Datasheet | SavantIC

DESCRIPTION - With TO-220F package - plement to type 2SD2060 - Low collector saturation voltage: VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A - Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS - With general purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -4 -0.4 2.0 W UNIT V V V A A Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50m A ;IB=0 IC=-3A ;IB=-0.3A IC=-3A;VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=10V 40 15 MIN -80 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO h FE-1 h FE-2 f T COB TYP. UNIT V -1.0 -1.0 -1.7 -1.5 -30 -100 240 V V µA µA 9.0 130 MHz p F h FE-1 Classifications R 40-80 O 70-140 Y 120-240 Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions Savant IC Semiconductor .. Product Specification Silicon PNP Power...