2SB337 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB337 SYMBOL MAX UNIT V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE Collector-emitter breakdown voltage IC=-10mA; IB=-0.4A IC=-1A ;VCE=-2V VCB=-30V;.