2SB434 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage CONDITIONS IC=-5mA ,IB=0 MIN -50 TYP. SYMBOL V(BR)CEO 2SB434 MAX UNIT V V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.2 V VBEsat...