2SB541
DESCRIPTION
- With TO-3 package
- High power dissipation APPLICATIONS
- For power switching and general purpose applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -110 -110 -6 -8 -3 80 150 -65~150 UNIT V V V A A W
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage CONDITIONS IC=-50m A ;IB=0 IC=-1m A ;IE=0 IE=-1m A ;IC=0 IC=-3A; IB=-0.3A VCB=-110V; IE=0 MIN -110 -110 -6
SYMBOL V(BR)CEO...
