2SB563 Overview
Description
With TO-66 package - Low collector saturation voltage APPLICATIONS - For low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -80 -80 -5 -3 25 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SB563 SYMBOL TYP. MAX UNIT V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE Collector-base breakdown voltage IC=-1mA; IE=0 IC=-10mA; IB=0 IE=-1mA; IC=0 IC=-3A; IB=-0.3A IC=-3A; IB=-0.3A VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V -80 V Collector-emitter breakdown voltage -80 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -1.0 V Base-emitter saturation voltage -1.5 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 30 200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB563 Fig.2 outline dimensions 3.
