2SB655
2SB655 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-3 package
- Low collector saturation voltage
- High power dissipation APPLICATIONS
- Power amplifier applications
- Remended for high-power high-fidelity audio frequency amplifier output stage
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -6 -12 -20 100 150 -40~150 UNIT V V V A A W
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30m A ;IB=0 IC=-1m A ;IE=0 IE=-1m A ;IC=0 IC=-6A; IB=-0.6A IC=-1A ; VCE=-5V VCB=-120V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-5V 35 20 20 MIN -160 -160 -6 TYP.
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO h FE-1 h FE-2 f T
UNIT V V V
-2.5 -1.5 -0.1 -0.1 200
V V m A m A
MHz
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)...
