2SB747 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-3A; VCE=-5V 20 40 20 MIN 2SB747 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 COB fT TYP....