2SB828
2SB828 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-3PN package
- plement to type 2SD1064
- Low collector saturation voltage
- Wide area of safe operation APPLICATIONS
- Relay drivers,high-speed inverters, converters,and other general highcurrent switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Tc=25 )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -12 -17 80 150 -55~150 UNIT V V V A A W
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1m A ;RBE=< IC=-1m A ;IE=0 IE=-1m A ;IC=0 IC=-6A ;IB=-0.3A VCB=-40V IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 10 MIN -50 -60 -6 TYP.
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO h FE-1 h FE-2 f T
UNIT V V V
-0.5 -0.1 -0.1 280
V m A m A
MHz
Switching times ton tstg tf Turn-on time Storage time Fall time IC=-5.0A; IB1=-IB2=-0.5A RL=4C;VCC=-20V 0.2 0.1 0.4 µs µs µs h FE-1 Classifications Q 70-140 R 100-200 S 140-280
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
Savant IC Semiconductor
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Product...