2SB829 Datasheet | SavantIC

DESCRIPTION - With TO-3PN package - plement to type 2SD1065 - Wide area of safe operation - Low collector saturation voltage : VCE(sat) =- 0.5V max. APPLICATIONS - Relay drivers, - High-speed inverters,converters - General high-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -15 -20 90 150 -55~150 UNIT V V V A A W Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1m A ;RBE=? IC=-1m A ;IE=0 IE=-1m A ;IC=0 IC=-8A ,IB=-0.4A VCB=-40V, IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-8A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 20 MHz MIN -50 -60 -6 -0.26 -0.5 -0.1 -0.1 280 TYP. MAX UNIT V V V V m A m A SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO h FE-1 h FE-2 f T Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2.0A; IB1=-IB2=-0.2A VCC=20V;RL=10H 0.20 0.10 0.50 µs µs µs h FE-1 Classifications Q 70-140 R 100-200 S 140-280 Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions Savant IC Semiconductor .. Product Specification Silicon PNP Power...