2SB869
2SB869 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-220C package
- plement to type 2SD961
- Low collector saturation voltage
- High collector current capability APPLICATIONS
- For power switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -130 -80 -7 -5 -10 40 150 -50~150 UNIT V V V A A W
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10m A; IB=0 IC=-4A; IB=-0.2A IC=-4A; IB=-0.2A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-2A ; VCE=-2V IC=-0.5A ; VCE=-10V 45 60 30 MIN -80
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO h FE-1 h FE-2 f T
TYP.
UNIT V
-0.5 -1.5 -10 -50
V V µA µA
260 MHz
Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2A ; IB1=-IB2=-0.2A 0.13 0.5 0.13 µs µs µs h FE-2 Classifications R 60-120 Q 90-180 P 130-260
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)...