2SB944 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ,IB=0 IC=-3A, IB=-0.15A IC=-3A, IB=-0.15A VEB=-5V; VCE=-10V;f=10MHz 45 90 MIN...