2SC1358 Overview
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Storage time IC=4A; IB1=-IB2=1.0A PW=20µs tf Fall time CONDITIONS IC=0.1A ; VCE=15V 10 5 MIN...
