SavantIC 2SC1450
SILICON POWER TRANSISTOR
DESCRIPTION
●With TO-66 package●Wide area of safe operation
●High collector-emitter breakdown voltage :VCEO=150V(min)
●Complement to type 2SA766
APPLICATIONS
●For power amplifier and vertical output applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbolDESCRIPTION
Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=80 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 0.4 20 150 -65~200 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDIT...