2SC2304 Overview
Description
With TO-3 package - High speed ,high voltage - Wide area of safe operation APPLICATIONS - For switching regulator application PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION MAXIMUN RATINGS SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Tmb-25 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 12 100 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=8A; IB=1.6A IC=8A; IB=1.6A VCB=500V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IC=10A ; VCE=4V IC=1A ; VCE=10V 15 10 MIN 400 500 7 2SC2304 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE -2 fT TYP. MAX UNIT V V V 1.0 1.5 0.1 0.1 50 V V mA mA 35 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2304 Fig.2 Outline dimensions 3.
