2SC2517
2SC2517 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-220C package
- Low collector saturation voltage
- Wide area of safe operation APPLICATIONS
- Switching regulators
- DC-DC converters
- High frequency power amplifiers
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 150 100 12 5 10 2.5 1.5 W UNIT V V V A A A
Savant IC Semiconductor
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=3.0A ; IB1=0.3A;L=1m H IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=100V ;IE=0 VCE=100V; VBE=-1.5V Ta=125 VEB=10V ;IC=0 IC=0.2 A ; VCE=5V IC=2 A ; VCE=5V 40 40 MIN 100
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO h FE-1 h FE-2
TYP.
UNIT V
0.6 1.5 10 10 1 10
V V µA µA m A µA
Switching times ton ts tf Turn-on time Storage time Fall time IC=3A; IB1=-IB2=0.3A RL=17@; VCC=50V 0.5 2.5 0.5 µs µs µs h FE-2 Classifications M 40-80 L 60-120 K 100-200
Savant IC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10...
