2SC2517 Description
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=3.0A ; IB=0.3A VCB=100V ;IE=0 VCE=100V; VBE=-1.5V Ta=125 VEB=10V ;IC=0 IC=0.2 A.