2SC2552
DESCRIPTION
- With TO-220C package
- High collector breakdown voltage : VCEO=400V(Min)
- Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.@IC=0.8A
APPLICATIONS
- Switching regulator and high voltage switching applications
- High speed DC-DC converter applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 2 0.5 1.5 W UNIT V V V A A
Savant IC Semiconductor
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation...
