Datasheet Details
| Part number | 2SC2552 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 177.19 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | 2SC2552_SavantIC.pdf |
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Overview: SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power.
| Part number | 2SC2552 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 177.19 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | 2SC2552_SavantIC.pdf |
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·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.@IC=0.8A 2SC2552 APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 2 0.5 1.5 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;
IB=0 IC=1mA ;
IE=0 IC=1A;
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2SC2552 | Silicon NPN Transistor | Toshiba Semiconductor |
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| 2SC2516 | SILICON POWER TRANSISTOR |
| 2SC2517 | SILICON POWER TRANSISTOR |
| 2SC2523 | SILICON POWER TRANSISTOR |
| 2SC2525 | SILICON POWER TRANSISTOR |
| 2SC2527 | SILICON POWER TRANSISTOR |
| 2SC2534 | SILICON POWER TRANSISTOR |
| 2SC2535 | SILICON POWER TRANSISTOR |