2SC2809 Description
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IC=1.5A; IB=0.3A VCB=300V IE=0 VEB=6V; VCE=12V...