2SC2832A Description
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC2832 2SC2832A CONDITIONS IC=0.2A; IB=0.6A VCB=800V;IE=0 SYMBOL VCEO(SUS) VCEsat VBEsat 2SC2832 2SC2832A MIN 500 TYP. MAX UNIT V 1.0 1.5 V V ICBO Collector cut-off current 100 VCB=900V;IE=0 VEB=5V;.