2SC2981
DESCRIPTION
- With TO-3 package
- High voltatge
- High speed APPLICATIONS
- For high voltatge ,high speed and power switching applications PINNING(see Fig.2)
PIN 1 2 3 Base Emitter DESCRIPTION
Fig.1 simplified outline (TO-3) and symbol Collector
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 900 800 7 8 100 150 -55~150 UNIT V V V A W
Savant IC Semiconductor
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS...
