2SC3163
DESCRIPTION
With TO-220C package
- High breakdown voltage
- High speed switching
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 6 2 50 150 -55~150 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT /W
Savant IC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100m A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
VBEsat
Base-emitter saturation voltage
IC=3A;...
