2SC3223
DESCRIPTION
- With TO-3 package
- High speed,high current
- Low saturation voltage APPLICATIONS
- For high current high speed,high power applications PINNING (See Fig.2)
PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tmb=25 Open emitter Open base Open collector CONDITIONS MAX 230 200 7 20 7 200 200 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 0.62 UNIT /W
Savant IC Semiconductor
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off...
