2SC3299 Overview
Key Specifications
Description
With TO-220Fa package - Complement to type 2SA1307 - Low saturation voltage - High speed switching time APPLICATIONS - High current switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 50 5 5 1 20 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA , IB=0 IC=3A; IB=0.15A IC=3A; IB=0.15A VCB=50V ;IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=3A ; VCE=1V IE=0 ; VCB=10V,f=1MHz IC=1A ; VCE=4V 70 30 MIN 50 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT 2SC3299 TYP. MAX UNIT V 0.4 1.2 1.0 1.0 240 V V µA µA 80 120 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=3A ;IB1=0.15A IB2=-0.15A,VCC=30V RL=10A 0.1 1.0 0.1 µs µs µs hFE-1 Classifications O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3299 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3299 4.
