2SC3306
2SC3306 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-3P(I) package
- Collector-emitter sustaining voltage VCEO(sus)=400V(Min)
- Fast switching times APPLICATIONS
- Switching regulator and high voltage switching applications
- High speed DC-DC converter applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 10 15 5 100 150 -55~150 UNIT V V V A A A W
Savant IC Semiconductor
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10m A ,IB=0 IC=1m A ,IE=0 IE=1m A ,IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=400V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=5V 10 MIN 400 500 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO h FE
TYP.
UNIT V V V
1.5 2.0 100 1.0
V V µA m A
Switching times tr tstg tf Rise time Storage time Fall time VCC=200V; IC=5.0A IB1=-IB2=0.5A;RL=40 < 1.0 2.5 1.0 µs µs µs
Savant IC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
Savant IC Semiconductor
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Product...
