2SC3658 Description
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage Fall time CONDITIONS IC=5A; IB1=1A;IB2=-2.5A;LB=0 8 MIN 2SC3658 SYMBOL VCEsat VBEsat ICBO IEBO hFE VECF tf TYP. MAX 2.0 1.5 0.5 500 UNIT V V mA mA 2.0...