2SC3685 Overview
Product Specification Silicon NPN Power Transistors 2SC3685 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IC=4A ;IB=1A IC=4A ;IB=1A VCE=1500V; VCE=5V 8 MIN 800 5 1.5 1 1 TYP.