2SC3822 Overview
Key Specifications
Description
With TO-220Fa package - High voltage ,high speed APPLICATIONS - For power switching ,power amplifier, power driver and electronic supply applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 450 400 6 5 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=2A; IB=0.4A IC=2A ;IB=0.4A VCB=450V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=5V IC=0.1A ; VCE=10V f=1MHz;VCB=10V 10 MIN 400 2SC3822 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 0.8 1.2 1.0 1.0 30 100 25 V V mA mA MHz pF 2 SavantIC Semiconductor Product Specification Silicon Power Transistors PACKAGE OUTLINE 2SC3822 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3.
