2SC3890 Overview
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ; IB=0.6A IC=3A ;IB=0.6A VCB=500V; VCE=12V f=1MHz;VCB=10V 10 MIN 400...

