2SC4056 Datasheet | SavantIC

DESCRIPTION - With ITO-220 package - Switching power transistor PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 600 450 7 8 16 4 8 45 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.77 UNIT /W Savant IC Semiconductor .. Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO h FE-1 h FE-2 f T ton ts tf Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Turn-on time Storage time Fall time IC=4A;IB1=0.8A IB2=1.6A ,RL=37.5C VBB2=4V At rated volatge IC=4A ; VCE=5V IC=1m A ; VCE=5V IC=0.8A ; VCE=10V 10 5 20 0.5 2.0 0.2 MHz µs µs µs 0.1 m A 0.1 m A CONDITIONS IC=0.2A ;IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A MIN 450 1.0 1.5 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat ICBO Savant IC Semiconductor .. Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20...