2SC4237 Datasheet | SavantIC

DESCRIPTION - With TO-247 package - Switching power transistor - High breakdown voltage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1200 800 7 10 20 4 8 150 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 0.83 UNIT /W .. Savant IC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated voltage ICEO IEBO h FE-1 h FE-2 f T Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated voltage IC=5A ; VCE=5V IC=1m A ; VCE=5V IC=1A ; VCE=10V 8 5 8 MHz 0.1 m A 0.1 m A CONDITIONS IC=0.2A; IB=0 IC=5A ;IB=1A IC=5A ;IB=1A MIN 800 1.0 1.5 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat ICBO Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=5A IB1=1A; IB2=2A VBB2=4V ,RL=50B 0.5 3.5 0.3 µs µs µs .. Savant IC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline...