2SC5280 Datasheet | SavantIC

Savant IC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION - With TO-3P(H)IS package .. - High voltage - Low saturation voltage - High speed - Bult-in damper diode APPLICATIONS - High speed switching applications - Horizontal deflection output for medium resolution display,color TV PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Fig.1 simplified outline (TO-3P(H)IS) and symbol Maximum absolute ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 8 16 4 UNIT V V V A A A W 150 -55~150 Savant IC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-base breakdown voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Diode forward voltage CONDITIONS IC=6A;IB=1.5 A IC=6A;IB=1.5 A IE=400m A;IC=0 VEB=5V; IC=0 VCB=1500V; IE=0 IC=1 A ; VCE=5V IC=6A ; VCE=5V IE=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=6A 10 4 5 72 MIN .. SYMBOL VCEsat VBEsat V(BR)EBO IEBO ICBO h FE-1 h FE-2 f T COB VF TYP. MAX 5 UNIT V V V 250 1 35 8.5 2 115 1.4 1.8 m A m A MHz p F V Switching times tstg tf Storage time Fall time 4 0.2 6 0.5 µs µs ICP=6A;IB1(end)=1.2A f H=31.5k...