2SD1175 Description
MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA; VCE=5V 10 30 hFE-2 DC current gain IC=4A ; VCE=10V 5 VF Diode forward voltage IF=4A 2.5 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE.