2SD1291 Overview
MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A;.
| Part number | 2SD1291 |
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| Datasheet | 2SD1291_SavantIC.pdf |
| File Size | 163.66 KB |
| Manufacturer | SavantIC |
| Description | SILICON POWER TRANSISTOR |
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MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SD1291 | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| 2SD1290 | SILICON POWER TRANSISTOR |
| 2SD1294 | SILICON POWER TRANSISTOR |
| 2SD1296 | SILICON POWER TRANSISTOR |
| 2SD1297 | SILICON POWER TRANSISTOR |
| 2SD1208 | SILICON POWER TRANSISTOR |
| 2SD1212 | SILICON POWER TRANSISTOR |
| 2SD1213 | SILICON POWER TRANSISTOR |
| 2SD1229 | SILICON POWER TRANSISTOR |
| 2SD1235 | SILICON POWER TRANSISTOR |
| 2SD1236L | SILICON POWER TRANSISTOR |