2SD1553
DESCRIPTION
- With TO-3P(H)IS package
- Built-in damper diode
- High voltage ,high speed
- Low collector saturation voltage APPLICATIONS
- For color TV horizontal output applications
PINNING PIN 1 2 3 DESCRIPTION
Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 2.5 1 40 150 -55~150 UNIT V V V A A W
Savant IC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
..
SYMBOL
TYP.
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=200m A , IC=0
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.6A
VBEsat
Base-emitter saturation...
