2SD1652 Overview
MAX UNIT V(BR)EBO V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT Emitter-base breakdown voltage IE=200mA , IC=0 IC=0.1A; IE=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V; 2SD1652 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm).
Silicon Power Transistor
| Part number | 2SD1652 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 168.32 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | 2SD1652_SavantIC.pdf |
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MAX UNIT V(BR)EBO V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT Emitter-base breakdown voltage IE=200mA , IC=0 IC=0.1A; IE=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V; 2SD1652 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm).
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SD1652 | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| 2SD1650 | SILICON POWER TRANSISTOR |
| 2SD1651 | Silicon NPN Power Transistors |
| 2SD1654 | SILICON POWER TRANSISTOR |
| 2SD1655 | SILICON POWER TRANSISTOR |
| 2SD1619 | Silicon NPN Power Transistor |
| 2SD1632 | SILICON POWER TRANSISTOR |
| 2SD1633 | SILICON POWER TRANSISTOR |
| 2SD1634 | SILICON POWER TRANSISTOR |
| 2SD1638 | SILICON POWER TRANSISTOR |
| 2SD1649 | SILICON POWER TRANSISTOR |