2SD2095 Overview
MAX UNIT V(BR)EBO VCEsat VBEsat ICBO hFE fT COB Emitter-base breakdown voltage IE=200mA , IC=0 IC=3.5A; 2SD2095 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm).
| Part number | 2SD2095 |
|---|---|
| Datasheet | 2SD2095_SavantIC.pdf |
| File Size | 265.89 KB |
| Manufacturer | SavantIC |
| Description | SILICON POWER TRANSISTOR |
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MAX UNIT V(BR)EBO VCEsat VBEsat ICBO hFE fT COB Emitter-base breakdown voltage IE=200mA , IC=0 IC=3.5A; 2SD2095 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm).
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SD2095 | Silicon NPN Power Transistors | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| 2SD2093 | SILICON POWER TRANSISTOR |
| 2SD200 | SILICON POWER TRANSISTOR |
| 2SD2000 | SILICON POWER TRANSISTOR |
| 2SD201 | SILICON POWER TRANSISTOR |
| 2SD2012 | SILICON POWER TRANSISTOR |
| 2SD2014 | SILICON POWER TRANSISTOR |
| 2SD2015 | SILICON POWER TRANSISTOR |
| 2SD2017 | SILICON POWER TRANSISTOR |
| 2SD2023 | SILICON POWER TRANSISTOR |
| 2SD2024 | SILICON POWER TRANSISTOR |