With TO-220F package
High DC current gain : hFE=2000 (Min)
Low saturation voltage
Complement to type 2SB1481
DARLINGTON APPLICATIONS
With switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO
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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2241
www.datasheet4u.com
DESCRIPTION ·With TO-220F package ·High DC current gain : hFE=2000 (Min) ·Low saturation voltage ·Complement to type 2SB1481 ·DARLINGTON APPLICATIONS ·With switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 Collector dissipation TC=25 Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 ±4 ±6 0.3 2.