2SD817 Overview
MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 600 V VCEsat Collector-emitter saturation voltage IC=1.2A;.
| Part number | 2SD817 |
|---|---|
| Datasheet | 2SD817_SavantIC.pdf |
| File Size | 135.20 KB |
| Manufacturer | SavantIC |
| Description | SILICON POWER TRANSISTOR |
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MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 600 V VCEsat Collector-emitter saturation voltage IC=1.2A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SD817 | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| 2SD820 | SILICON POWER TRANSISTOR |
| 2SD821 | SILICON POWER TRANSISTOR |
| 2SD826 | SILICON POWER TRANSISTOR |
| 2SD834 | SILICON POWER TRANSISTOR |
| 2SD841 | SILICON POWER TRANSISTOR |
| 2SD844 | SILICON POWER TRANSISTOR |
| 2SD845 | SILICON POWER TRANSISTOR |
| 2SD847 | SILICON POWER TRANSISTOR |
| 2SD849 | SILICON POWER TRANSISTOR |
| 2SD850 | SILICON POWER TRANSISTOR |