2SD817 Description
MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 600 V VCEsat Collector-emitter saturation voltage IC=1.2A;.
| Part number | 2SD817 |
|---|---|
| Download | 2SD817 Datasheet (PDF) |
| File Size | 135.20 KB |
| Manufacturer | SavantIC |
| Description | SILICON POWER TRANSISTOR |
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| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
2SD817 | NPN Transistor |
MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 600 V VCEsat Collector-emitter saturation voltage IC=1.2A;.