A1679 Overview
Description
With ITO-220 package - Switching power transistor - Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Product Specification 2SA1679 Fig.1 simplified outline (ITO-220) and symbol SYMBOL PARAMETER VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 SYMBOL PARAMETER Rth j-C VALUE -60 -40 -7 -5 -10 -1.5 -2 25 150 -55~150 UNIT V V V A A A A W MAX 5.0 UNIT /W SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SA1679 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=-0.05A ;IB=0 VCEsat Collector-emitter saturation voltage IC=-2.5A; IB=-0.13A VBEsat Base-emitter saturation voltage IC=-2.5A; IB=-0.13A ICBO Collector cut-off current ICEO At rated volatge IEBO Emitter cut-off current At rated volatge hFE DC current gain IC=-2.5A ; VCE=-2V fT Transition frequency IC=-0.5A ; VCE=-10V Switching times ton Turn-on time ts Storage time tf Fall time IC=-2.5A;IB1=-IB2=-0.25A , RL=12B;VBB2=-4V MIN TYP. MAX UNIT -40 V -0.3 V -1.2 V -0.1 mA -0.1 mA 70 50 MHz 0.3 µs 1.5 µs 0.5 µs 2 SavantIC Semiconductor Silicon PNP Power Transistors PACKAGE OUTLINE Product Specification 2SA1679 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3.
