B1342 Overview
Description
With TO-220Fa package - High DC current gain - Low saturation voltage - DARLINGTON APPLICATIONS - For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -7 -4 -6 2 W UNIT V V V A A Datasheet pdf - SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1342 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-1mA; IB=0 IC=-50µA; IE=0 IC=-2A ;IB=-4mA VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-3V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz 1000 12 45 MIN -80 -80 -1.0 -1.5 -100 -3.0 10000 MHz pF TYP. MAX UNIT V V V µA mA SYMBOL V(BR)CEO V(BR)CBO VCEsat ICBO IEBO hFE fT COB 2 Datasheet pdf - SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1342 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 Datasheet pdf.
